SI2301 A1SHB P-Channel MOSFET SOT-23 SMD Package

The SI2301 A1SHB is a P-Channel MOSFET designed for efficient switching and amplification in a variety of electronic applications. It is encapsulated in a compact SOT-23 surface-mount device (SMD) package, making it ideal for space-constrained and high-density circuit designs.Key Features:Type: P-Channel MOSFETPackage: SOT-23 (3-pin surface-mount package)Maximum Voltage (VDS): -20VMaximum Current (ID): -2.8APower Dissipation (Ptot): 1.25WLow On-Resistance (RDS(on)): Typically 85 mΩ at VGS = -4.5VFast Switching Speed: Suitable for high-speed applicationsGate Threshold Voltage (VGS(th)): Typically -1.0VElectrical Characteristics:Drain-Source Voltage (VDS): -20VGate-Source Voltage (VGS): ±12VContinuous Drain Current (ID): -2.8APulsed Drain Current (IDM): -10APower Dissipation (Ptot): 1.25WOn-Resistance (RDS(on)):85 mΩ at VGS = -4.5V150 mΩ at VGS = -2.5VGate Charge (Qg): Typically 4.5nCPackage and Pin Configuration:The SI2301 A1SHB MOSFET is housed in a compact SOT-23 package with three pins:Pin 1: Gate (G)Pin 2: Source (S)Pin 3: Drain (D)Note: Product images are for illustrative purposes only and may differ from the actual product.

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