UTT50N06MG N-Channel MOSFET TO-252 SMD Package

The UTT50N06MG is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-current, high-voltage switching applications. It is housed in a TO-252 surface-mount device (SMD) package, making it suitable for high-density circuit board layouts and efficient heat dissipation. Here’s a detailed description of the product:Key Features:Type: N-Channel MOSFETPackage: TO-252 (Surface Mount Device)Polarity: N-ChannelMaximum Drain-Source Voltage (Vds): 60VMaximum Continuous Drain Current (Id): 50AMaximum Power Dissipation (Pd): 125WLow On-Resistance (Rds(on)): Typically 0.015Ω at Vgs = 10VGate Threshold Voltage (Vgs(th)): 2V to 4VApplications:Load Switching: Ideal for switching high-voltage and high-current loads.Power Management: Suitable for use in power management applications in industrial and automotive systems.Motor Drives: Commonly used in motor control and drive applications due to its high current capability.DC-DC Converters: Can be used in high-efficiency DC-DC converter circuits.Battery Protection: Useful in battery management systems for overcurrent protection.Pin Configuration:Pin 1 (Gate): The gate terminal, which controls the transistor’s switching.Pin 2 (Drain): The drain terminal, through which the main current flows when the transistor is in the 'on' state.Pin 3 (Source): The source terminal, which is typically connected to the negative side of the load.Tab (Drain): The tab is electrically connected to the drain terminal, providing a low-resistance path for heat dissipation.Electrical Characteristics:Vds (Drain-Source Voltage): 60V maxVgs (Gate-Source Voltage): ±20V maxId (Continuous Drain Current): 50A maxPtot (Total Power Dissipation): 125W maxRds(on) (On-Resistance): 0.015Ω typical at Vgs = 10VQg (Total Gate Charge): 100nC typicaltd(on) (Turn-On Delay Time): 20ns typicaltd(off) (Turn-Off Delay Time): 45ns typicalNote: Product images are for illustrative purposes only and may differ from the actual product.

INR 22 · In stock