BC846BLT1G - 65V 100mA NPN Silicon Bipolar Transistor SOT-23 SMD Package

BC846BLT1G - 65V 100mA NPN Silicon Bipolar Transistor SOT-23 SMD Package

The BC846BLT1G is a general-purpose NPN silicon bipolar junction transistor (BJT) designed for low-power amplification and switching applications. It comes in a small SOT-23 surface-mount device (SMD) package, making it suitable for compact and high-density electronic designs.Specifications:Type: NPN TransistorCollector-Emitter Voltage (Vce): 65VCollector-Base Voltage (Vcbo): 80VEmitter-Base Voltage (Vebo): 6VCollector Current (Ic): 100mAPower Dissipation (Ptot): 310mWPin Configuration:EmitterBaseCollectorKey Characteristics:DC Current Gain (hFE): Typically ranges from 110 to 800.Transition Frequency (fT): 100MHzCollector-Emitter Saturation Voltage (Vce(sat)): 250mVNoise Figure: 4dBFeatures:High DC Current GainLow Saturation VoltageHigh Transition FrequencySuitable for surface-mount applicationsLow NoiseNote: Product images are for illustrative purposes only and may differ from the actual product.

INR 7 · In stock

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