IRF3205 N-Channel Power MOSFET

The IRF3205 is an N-channel MOS Field Effect Transistor designed for high current switching applications. It utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This feature, combined with the fast switching speed and ruggedized device design, makes the IRF3205 Power MOSFET an extremely efficient and reliable device that can be used in a wide range of applications. The IRF3205 can be used in inverter application, uninterruptible power supply, hard switched and high frequency circuits and more.Product Description of IRF3205 N-Channel Power MOSFETFeatures of IRF3205 N-Channel Power MOSFETAdvanced Process TechnologyUltra Low On-ResistanceFast SwitchingContinuous drain current : 110 AMaximum Drain to source voltage: 55VMinimum gate threshold voltage : 2VFully Avalanche RatedLow gate chargeOperating Temperature : -55 to 125°C Package Includes1 x IRF3205 N-Channel Power MOSFET

INR 32 · Out of stock