2N7002K MOSFET SOT-23 SMD Package

The 2N7002K is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for low-voltage, high-current switching applications. It is housed in a compact SOT-23 surface-mount device (SMD) package, making it ideal for high-density circuit board layouts. Here’s a detailed description of the product:Key Features:Type: N-Channel MOSFETPackage: SOT-23 (Surface Mount Device)Polarity: N-ChannelMaximum Drain-Source Voltage (Vds): 60VMaximum Continuous Drain Current (Id): 340mAMaximum Power Dissipation (Pd): 350mWLow On-Resistance (Rds(on)): Typically 1.8Ω at Vgs = 10VGate Threshold Voltage (Vgs(th)): 1V to 2.5VApplications:Load Switching: Ideal for switching low-voltage loads.Signal Amplification: Suitable for signal amplification in various electronic circuits.Battery-Powered Applications: Commonly used in battery-powered applications due to its low power consumption.Low-Power DC-DC Converters: Can be used in DC-DC converter circuits for efficient power conversion.Physical Dimensions:Length: Approximately 2.92mmWidth: Approximately 1.3mmHeight: Approximately 1.1mmPin Configuration:Pin 1 (Gate): The gate terminal, which controls the transistor’s switching.Pin 2 (Source): The source terminal, which is typically connected to the negative side of the load.Pin 3 (Drain): The drain terminal, through which the main current flows when the transistor is in the 'on' state.Electrical Characteristics:Vds (Drain-Source Voltage): 60V maxVgs (Gate-Source Voltage): ±20V maxId (Continuous Drain Current): 340mA maxPtot (Total Power Dissipation): 350mW maxRds(on) (On-Resistance): 1.8Ω typical at Vgs = 10VQg (Total Gate Charge): 1.2nC typicaltd(on) (Turn-On Delay Time): 8ns typicaltd(off) (Turn-Off Delay Time): 20ns typicalNote: Product images are for illustrative purposes only and may differ from the actual product.

INR 4 · In stock