FDN357P P-Channel Logic Level Enhancement Mode MOSFET SOT-23 SMD Package

The FDN357P is a P-channel logic level enhancement mode MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for low-voltage, high-current switching applications. It is housed in a compact SOT-23 surface-mount device (SMD) package, making it ideal for high-density circuit board layouts. Here’s a detailed description of the product:Key Features:Type: P-Channel MOSFETPackage: SOT-23 (Surface Mount Device)Polarity: P-ChannelMaximum Drain-Source Voltage (Vds): 30VMaximum Continuous Drain Current (Id): 1.9AMaximum Power Dissipation (Pd): 1.25WLow On-Resistance (Rds(on)): Typically 0.08Ω at Vgs = -10VGate Threshold Voltage (Vgs(th)): -1V to -3VApplications:Load Switching: Ideal for switching low-voltage loads.Power Management: Suitable for use in power management applications in portable devices.Battery-Powered Applications: Commonly used in battery-powered applications due to its low on-resistance and high efficiency.DC-DC Converters: Can be used in DC-DC converter circuits for efficient power conversion.Physical Dimensions:Length: Approximately 2.92mmWidth: Approximately 1.3mmHeight: Approximately 1.1mmPin Configuration:Pin 1 (Gate): The gate terminal, which controls the transistor’s switching.Pin 2 (Source): The source terminal, which is typically connected to the positive side of the load.Pin 3 (Drain): The drain terminal, through which the main current flows when the transistor is in the 'on' state.Electrical Characteristics:Vds (Drain-Source Voltage): 30V maxVgs (Gate-Source Voltage): ±20V maxId (Continuous Drain Current): 1.9A maxPtot (Total Power Dissipation): 1.25W maxRds(on) (On-Resistance): 0.08Ω typical at Vgs = -10VQg (Total Gate Charge): 9nC typicaltd(on) (Turn-On Delay Time): 15ns typicaltd(off) (Turn-Off Delay Time): 25ns typicalNote: Product images are for illustrative purposes only and may differ from the actual product.

INR 8 · In stock