BS170 N-Channel Switching MOSFET

The BS170N is a small signal N-channel Enhancement Mode MOSFET. It is produced using the high cell DMOS technology. It provides reliable, fast switching performance and can be used in small servo motor control, power MOSFET gate drivers, and other switching applications. The BS170N transistor has a continuous drain current of 500mA and a Drain to Source voltage of 60V. It has an on-state resistance of 2.5 ohms and can withstand peak current up to 1200mA.Product Description of BS170 N-Channel Switching MOSFET Features of BS170 N-Channel Switching MOSFETFast Switching SpeedHigh Input ImpedanceCMOS Logic Compatible InputNo Thermal Runaway or Secondary BreakdownVoltage controlled small signal switchDrain-source voltage: max. 60VGate-source voltage: max. 15VDrain current (DC): max. 500 mAHigh saturation current capabilityOperating temperature: 55 to +150 °C Package Contents1 x BS170 N-Channel Switching MOSFET

INR 12 · In stock