CJ2301 P-Channel MOSFET SOT-23 SMD Package

The CJ2301 is a P-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for low-voltage, high-current switching applications. It is housed in a compact SOT-23 surface-mount device (SMD) package, making it ideal for high-density circuit board layouts. Here’s a detailed description of the product:Key Features:Type: P-Channel MOSFETPackage: SOT-23 (Surface Mount Device)Polarity: P-ChannelMaximum Drain-Source Voltage (Vds): 20VMaximum Continuous Drain Current (Id): 2.3AMaximum Power Dissipation (Pd): 400mWLow On-Resistance (Rds(on)): Typically 0.1Ω at Vgs = -4.5VGate Threshold Voltage (Vgs(th)): -1V to -3VApplications:Load Switching: Ideal for switching low-voltage loads.Power Management: Suitable for use in power management applications in portable devices.Battery-Powered Applications: Commonly used in battery-powered applications due to its low on-resistance and high efficiency.DC-DC Converters: Can be used in DC-DC converter circuits for efficient power conversion.Physical Dimensions:Length: Approximately 2.92mmWidth: Approximately 1.3mmHeight: Approximately 1.1mmPin Configuration:Pin 1 (Gate): The gate terminal, which controls the transistor’s switching.Pin 2 (Source): The source terminal, which is typically connected to the positive side of the load.Pin 3 (Drain): The drain terminal, through which the main current flows when the transistor is in the 'on' state.Electrical Characteristics:Vds (Drain-Source Voltage): 20V maxVgs (Gate-Source Voltage): ±8V maxId (Continuous Drain Current): 2.3A maxPtot (Total Power Dissipation): 400mW maxRds(on) (On-Resistance): 0.1Ω typical at Vgs = -4.5VQg (Total Gate Charge): 10nC typicaltd(on) (Turn-On Delay Time): 10ns typicaltd(off) (Turn-Off Delay Time): 25ns typicalNote: Product images are for illustrative purposes only and may differ from the actual product.

INR 5 · In stock