FDN337N 30V 2.2A N-Channel Logic Level Enhancement Mode MOSFET SOT-23 SMD Package

The FDN337N is an N-Channel logic level enhancement mode MOSFET designed for efficient switching and amplification in a variety of electronic applications. It is housed in a compact SOT-23 surface-mount device (SMD) package, making it ideal for high-density circuit designs.Key Features:Type: N-Channel Logic Level Enhancement Mode MOSFETPackage: SOT-23 (3-pin surface-mount package)Maximum Voltage (VDS): 30VMaximum Current (ID): 2.2APower Dissipation (Ptot): 350mWLow On-Resistance (RDS(on)):Typically 0.045Ω at VGS = 10VTypically 0.070Ω at VGS = 4.5VFast Switching Speed: Suitable for high-speed applicationsGate Threshold Voltage (VGS(th)): Typically 1.0VElectrical Characteristics:Drain-Source Voltage (VDS): 30VGate-Source Voltage (VGS): ±20VContinuous Drain Current (ID): 2.2APulsed Drain Current (IDM): 8APower Dissipation (Ptot): 350mWOn-Resistance (RDS(on)):0.045Ω at VGS = 10V0.070Ω at VGS = 4.5VGate Charge (Qg): Typically 7nCPackage and Pin Configuration:The FDN337N MOSFET is housed in a compact SOT-23 package with three pins:Pin 1: Gate (G)Pin 2: Source (S)Pin 3: Drain (D)Note: Product images are for illustrative purposes only and may differ from the actual product.

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