IRF840 N-Channel Power MOSFET - D2PAK - TO-263 Package

The IRF840 is a high-voltage N-channel power MOSFET designed for efficient switching applications. With a drain-source voltage rating of 500V and continuous drain current of 8A, it is well-suited for use in SMPS, power inverters, motor drives, and other high-voltage circuits. It features low gate charge and fast switching capability, making it ideal for high-frequency power conversion tasks. The TO-263 (D2PAK) surface-mount package offers reliable thermal performance and space-saving integration in PCB designs.Features of IRF840 N-Channel Power MOSFET:N-channel enhancement-mode MOSFET with high-voltage toleranceDrain-source voltage up to 500VContinuous drain current of 8AFast switching performance with low gate chargeTO-263 surface-mount package (D2PAK) for efficient heat dissipationIdeal for high-speed switching power supplies and invertersCompatible with logic-level drive circuitsSpecifications of IRF840 N-Channel Power MOSFET:Model: IRF840Type: N-Channel Power MOSFETDrain-Source Voltage (VDS): 500VContinuous Drain Current (ID): 8AGate Threshold Voltage (VGS(th)): 2.0V – 4.0VRDS(on): 0.85Ω (max)Total Gate Charge (Qg): 67nC (typical)Power Dissipation: 125WPackage: D2PAK – TO-263 – SMDOperating Temperature: -55°C to +150°CPackage Includes:1 × IRF840 N-Channel Power MOSFET – D2PAK – TO-263 Package

INR 43 · In stock