BSS138 N-Channel Enhancement Mode MOSFET SOT-23 SMD Package

The BSS138 is an N-channel enhancement mode MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for general-purpose switching and amplification applications. It is housed in a compact SOT-23 surface-mount device (SMD) package, making it ideal for high-density circuit board layouts. Here’s a detailed description of the product:Key Features:Type: N-Channel Enhancement Mode MOSFETPackage: SOT-23 (Surface Mount Device)Polarity: N-ChannelMaximum Drain-Source Voltage (Vds): 50VMaximum Continuous Drain Current (Id): 220mAMaximum Power Dissipation (Pd): 300mWLow On-Resistance (Rds(on)): Typically 3.5Ω at Vgs = 10VGate Threshold Voltage (Vgs(th)): 1.3V to 2.3VApplications:Load Switching: Ideal for switching low-voltage loads.Signal Amplification: Suitable for signal amplification in various electronic circuits.Battery-Powered Applications: Commonly used in battery-powered applications due to its low power consumption.DC-DC Converters: Can be used in DC-DC converter circuits for efficient power conversion.Physical Dimensions:Length: Approximately 2.92mmWidth: Approximately 1.3mmHeight: Approximately 1.1mmPin Configuration:Pin 1 (Gate): The gate terminal, which controls the transistor’s switching.Pin 2 (Source): The source terminal, which is typically connected to the negative side of the load.Pin 3 (Drain): The drain terminal, through which the main current flows when the transistor is in the 'on' state.Electrical Characteristics:Vds (Drain-Source Voltage): 50V maxVgs (Gate-Source Voltage): ±20V maxId (Continuous Drain Current): 220mA maxPtot (Total Power Dissipation): 300mW maxRds(on) (On-Resistance): 3.5Ω typical at Vgs = 10VQg (Total Gate Charge): 1.2nC typicaltd(on) (Turn-On Delay Time): 10ns typicaltd(off) (Turn-Off Delay Time): 20ns typicalPackage Includes:1 x BSS138 N-Channel Enhancement Mode MOSFET SOT-23 SMD PackageNote: Product images are for illustrative purposes only and may differ from the actual product.

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